Nell Power Semiconductor 2SA1943BL
Silicon PNP Transistor
FEATURES
High breakdown voltage, V CEO = -230V (min) Complementary to 2SC5200BL TO-3PL package which can be installed to the heat sink with one screw 5.45 ± 0.05 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20APPLICATIONS
Suitable for use in 100W high fidelity audio amplifier’s output stage 1 2 3 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER B C E PNP All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current t p ≤ 5 ms PARAMETER VALUE -230 -230 -5 -30 -15 -1.5 T C = 25 °C 150 150 UNIT V Collector current Base current Collector power dissipation Junction temperature Storage temperature A W ºC -55 to 150 THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Maximum thermal resistance, junction to case VALUE 1.10 UNIT ºC/W Page 1 of 3 SEMICONDUCTOR 2SA1943BL Series RoHS RoHS Nell High Power ProductsELECTRICAL CHARACTERISTICS
(Ta = 25°C) VALUE SYMBOL PARAMETER Collector cutoff current Emitter cutoff current CONDITIONS MIN.