Nell Power Semiconductor 2SB649AM
Bipolar General Purpose PNP Power Transistor
| Part No. | 2SB649AM |
|---|---|
| Datasheet | 2SB649AM Download |
| Manufacturer |  Nell Power Semiconductor |
| Description | Bipolar General Purpose PNP Power Transistor |
| Buy | Stock & Price |
APPLICATIONS
Low frequency power amplifier complementary pair with 2SD669AM/2SD669AM-A 0.8 2.29±0.5 2.29±0.5 0.55 1.2 15.6±0.5 1(E) 3 (B) 2 (C) 3.7±0.7 11.0±0.5 C E C B B E PNP All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) SYMBOL VCBO V CEO V EBO I C(peak) IC PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current T C = 25 °C PC Collector power dissipation T A = 25 °C Tj T stg Junction temperature Storage temperature 1 150 ºC -55 to 150 VALUE 2SB649AM -180 -120 -5 -3 A -1.5 20 W 2SB649AM-A -180 -160 V UNIT Page 1 of 4 SEMICONDUCTOR 2SB649AM Series RoHS RoHS Nell High Power ProductsELECTRICAL CHARACTERISTICS
(Ta = 25°C) SYMBOL V (BR)CBO PARAMETER Collector to base breakdown voltage CONDITIONS I C = -1mA, l E = 0 2SB649AM V (BR)CEO Collector to emitter breakdown voltage I C = -10mA, R BE = ∞ 2SB649AM-A V (BR)EBO I CBO Emitter to base breakdown voltage Collector cutoff current I E = -1mA, I C =...
