Nell Power Semiconductor 2SC2625B
Silicon NPN Transistor
FEATURES
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 4.0 max 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 CAPPLICATIONS
Switching regulator and general purpose Ultrasonic generators High frequency inverters 1 2 3 B E NPN All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(TC = 25°C) SYMBOL VCBO V CEO Collector to emitter voltage V CEO(SUS) V EBO IC IB PC Tj T stg Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C 400 7 10 A 3 80 150 ºC -55 to 150 W PARAMETER Collector to base voltage VALUE 450 400 V UNIT THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.55 UNIT ºC/W Page 1 of 3 SEMICONDUCTOR RoHS 2SC2625B RoHS Nell High Power Products ELECTR...