Nell Power Semiconductor 2SC3320B
Silicon NPN Transistor
FEATURES
High-speed switching High collector to base voltage, V CBO Satisfactory linearity of foward current transfer ratio h FE TO-3P package which can be installed to the heat sink with one screw 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C 1 2 3 BAPPLICATIONS
Switching regulator and general purpose Ultrasonic generators High frequency inverters General purpose power amplifiers E NPN All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(TC = 25°C) SYMBOL VCBO V CEO Collector to emitter voltage V CEO(SUS) V EBO IC IB PC Tj T stg Emitter to base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C 400 7 15 A 5 150 150 ºC -55 to 150 W PARAMETER Collector to base voltage VALUE 500 400 V UNIT THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Thermal resistance, Junction to case (MAX.) VALUE 1.55 UNIT °C/W Page 1 of 3 SEMICONDUCTOR 2SC3320B RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERI...