Nell Power Semiconductor 2SC3679B
Silicon NPN Transistor
FEATURES
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 5.45±0.1 B C E +0.2 1.05 -0.1 5.45±0.1 +0.2 0.65 -0.1 1.4 C 1 2 3 BAPPLICATIONS
Switching regulator and general purpose E NPN All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C T a = 25 °C VALUE 900 800 7 10 5 2.5 100 3.5 150 -55 to 150 ºC W A V UNIT THERMAL RESISTANCE (Ta=25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to ambient Min Typ Max 2.0 UNIT °C/W Page 1 of 3 SEMICONDUCTOR 2SC3679B RoHS RoHS Nell High Power ProductsELECTRICAL CHARACTERISTICS
(Ta = 25°C) SYMBOL ICBO I EBO V (BR)CEO V CEO(SU...