Nell Power Semiconductor 2SC4110B
Silicon NPN Transistor
APPLICATIONS
RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 minFEATURES
High-speed switching High breakdown voltage and high reliability Wide SOA (Safe Operation Area) TO-3P package which can be installed to the heat sink with one screw 4.0 max 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 CAPPLICATIONS
Switching regulator High frequency inverters Ultrasonic generators General purpose power amplifiers 1 2 3 B E NPN All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) SYMBOL VCBO V CEO V EBO I CP IC IB PC Tj T stg PARAMETER Collector to base voltage (I E =0) Collector to emitter voltage (I B =0) Emitter to base voltage Peak collector current (PW ≤ 300 µ s, duty cycle ≤ 10% ) VALUE 500 400 7 40 25 8 T C = 25 °C 160 UNIT V Collector current Base current Collector power dissipation T A = 25 °C Junction temperature Storage temperature A W 2.5 150 ºC -55 to 150 THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case Min.