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4N80 Datasheet PDF

Nell Power Semiconductor 4N80

4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. They are designed for use in applications.
Part No. 4N80
Datasheet 4N80 Download
Manufacturer
Nell Power Semiconductor
Description N-Channel Power MOSFET
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4N80 datasheet page 1 preview

DESCRIPTION

(4A, 800Volts) The Nell threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications .

FEATURES

RDS(ON) = 3.6Ω @ VGS = 10V Ultra low gate charge(25nC max.) Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (4N80A) GDS TO-220F (4N80AF) D (Drain) G (Gate) PRODUCT SUMMARY ID (A) 4 VDSS (V) 800 RDS(ON) (Ω) 3.6 @ VGS = 10V QG(nC) max. 25 S (Source)

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) IAR=4A...
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