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4N80 - N-Channel Power MOSFET

General Description

The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max.

threshold voltage of 5 volts.

They are designed for use in applications.

Key Features

  • RDS(ON) = 3.6Ω @ VGS = 10V Ultra low gate charge(25nC max. ) Low reverse transfer capacitance (CRSS = 9pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (4N80A) GDS TO-220F (4N80AF) D (Drain) G (Gate).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 3.6Ω @ VGS = 10V Ultra low gate charge(25nC max.