Datasheet Details
| Part number | 4PT06AI-08 |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| File Size | 451.33 KB |
| Description | Sensitive gate SCRs |
| Datasheet |
 4PT06AI-08 Datasheet
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Download the 4PT06AI-08 datasheet PDF. This datasheet also includes the 4PT variant, as both parts are published together in a single manufacturer document.
| Part number | 4PT06AI-08 |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| File Size | 451.33 KB |
| Description | Sensitive gate SCRs |
| Datasheet |
4PT06AI-08 Datasheet
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Thanks to highly sensitive triggering levels, the 4PT series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, overvoltage crowbar protection for low power supplies among others.
Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.
A KAG TO-220AB (Non-lnsulated) (4PTxxA) K A G TO-126 (Non-lnsulated) (4PTxxAM) KA G TO-220AB (lnsulated) (4PTxxAI) K A G TO-202-3 (4PTxxAT) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing IT(RMS) IT(AV) ITSM I2t TO-251/TO-252/TO-220AB TO-220AB insulated TO-126 TO-202-3 TO-251/TO-252/TO-220AB TO-220AB insulated TO-126 TO-202-3 F =50 Hz F =60 Hz tp = 10 ms Tc=115°C Tc=110°C Tc=95°C Tc=60°C Tc=115°C Tc=110°C Tc=95°C Tc=60°C t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current dI/dt IGM F = 60 Hz Tp = 20 µs Tj = 125ºC Tj = 125ºC Average gate power dissipation PG(AV) Tj =125ºC Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM VRRM Tj =125ºC Storage temperature range Tstg Operating junction temperature range Tj VALUE 4 2.5 30 33 4.5 50 1.2 0.2 600 and 800 - 40 to + 150 - 40 to + 125 UNIT A A A A2s A/µs A W V ºC www.nellsemi.com Page 1 of 7 SEMICONDUCTOR 4PT Series RRooHHSS ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS IGT VGT VGD IH IL dV/dt VTM IDRM IRRM VD = 12V, RL = 30Ω VD
SEMICONDUCTOR 4PT Series RRooHHSS Sensitive gate SCRs, 4A Main.
| Part Number | Description |
|---|---|
| 4PT06AI-03 | Sensitive gate SCRs |
| 4PT06AI-05 | Sensitive gate SCRs |
| 4PT06AI-06 | Sensitive gate SCRs |
| 4PT06AI-S | Sensitive gate SCRs |
| 4PT06A-03 | Sensitive gate SCRs |
| 4PT06A-05 | Sensitive gate SCRs |
| 4PT06A-06 | Sensitive gate SCRs |
| 4PT06A-08 | Sensitive gate SCRs |
| 4PT06A-S | Sensitive gate SCRs |
| 4PT06F-03 | Sensitive gate SCRs |