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5N90 - N-Channel Power MOSFET

General Description

The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max.

threshold voltage of 5 volts.

Key Features

  • RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max. ) Low reverse transfer capacitance (CRSS = 13pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source).

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Full PDF Text Transcription for 5N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 5N90. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR 5N90 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5A, 900Volts) DESCRIPTION The Nell 5N90 is a three-terminal silicon device with curren...

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SCRIPTION The Nell 5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D GDS TO-220AB (5N90A) GDS TO-220F (5N90AF) FEATURES RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max.

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