Nell Power Semiconductor 5N90
5N90 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
| Part No. |
5N90 |
| Datasheet |
5N90
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| Manufacturer |
 Nell Power Semiconductor |
| Description |
N-Channel Power MOSFET |
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DESCRIPTION
The Nell threshold voltage of 5 volts. D GDS TO-220AB (5N90A) GDS TO-220F (5N90AF) FEATURES
RDS(ON) = 2.80Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 13pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 5 900 2.80 @ VGS = 10V 40 ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS VDGR VGS ID IDM IAR EAR EAS dv/dt Drain to Source voltage(Note 1) Drain to Gate voltage Gate to Source voltage Continuous Drain Current Pulsed Drain current (Note 1) Repetitive avalanche current (Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TJ=25°C to 150°C RGS=20KΩ TC=25°C TC=100°C IAR=5A, RGS=50Ω, VGS=10V IAS=5A, L=52.8mH PD TO-220AB Total power dissipation (Derating factor abo...
