FEATURES
Symbol IT(RMS) VDRM/VRRM IGT Value 6 600 to 1000 15 Unit A V mA DESCRIPTION
A K A G TO-251 (I-PAK) (6PTxxF) A A KA G TO-252 (D-PAK) (6PTxxG) K AG KAG TO-220AB (Non-lnsulated) (6PTxxA) TO-220AB (lnsulated) (6PTxxAI) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) IT(RMS) IT(AV) TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated Tc=110°C Tc=105°C Tc=110°C Tc=105°C Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing ITSM I2t F =50 Hz F =60 Hz tp = 10 ms t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range dI/dt IGM PGM PG(AV) VDRM VRRM Tstg F = 60 Hz Tp = 20 µs Tp =20µs Tj =125ºC Tj...
Nell Power Semiconductor
