Datasheet Details
| Part number | 6PT |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| File Size | 311.34 KB |
| Description | Stansard SCRs |
| Datasheet | 6PT-nELL.pdf |
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Overview: SEMICONDUCTOR 6PT Series RRooHHSS Stansard SCRs, 6A Main.
| Part number | 6PT |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| File Size | 311.34 KB |
| Description | Stansard SCRs |
| Datasheet | 6PT-nELL.pdf |
|
|
|
The 6PT series of silicon controlled rectifiers are high performance glass passivated technology, and are designed for power supply up to 400Hz on resistive or inductive load.
A K A G TO-251 (I-PAK) (6PTxxF) A A KA G TO-252 (D-PAK) (6PTxxG) K AG KAG TO-220AB (Non-lnsulated) (6PTxxA) TO-220AB (lnsulated) (6PTxxAI) 2(A) 3(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) IT(RMS) IT(AV) TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated Tc=110°C Tc=105°C Tc=110°C Tc=105°C Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing ITSM I2t F =50 Hz F =60 Hz tp = 10 ms t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range dI/dt IGM PGM PG(AV) VDRM VRRM Tstg F = 60 Hz Tp = 20 µs Tp =20µs Tj =125ºC Tj = 125ºC Tj = 125ºC Tj = 125ºC Tj =125ºC Operating junction temperature range Tj VALUE 6 3.8 70 73 24.5 50 4 10 1 600 to 1000 - 40 to + 150 - 40 to + 125 UNIT A A A A2s A/µs A W W V ºC .nellsemi.
Page 1 of 5 SEMICONDUCTOR 6PT Series RRooHHSS ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS IGT VGT VGD IH IL dV/dt VTM IDRM IRRM tq VD = 12V, RL = 30Ω VD = VDRM, RL = 3.3KΩ RGK = 220Ω, Tj = 110°C IT = 100mA, Gate open IG = 1.2×IGT VD = 67% VDRM, Gate open, Tj = 110°C IT = 12A, tP = 380 µs VD=VDRM, VR=VRRM RGK = 220Ω VD = 67% VDRM, ITM = 12A, VR = 25V dITM = 30A/µs, dVD/dt =50V/µs Tj = 25°C Tj = 25°C Tj = 110°C Tj = 110°C Max.
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