75N10 Datasheet PDF | Nell Power Semiconductor

Nell Power Semiconductor 75N10

75N10 is a three-terminal silicon device with current conduction capability of 75A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits.

Part No.	75N10
Datasheet	75N10 Download
Manufacturer	Nell Power Semiconductor
Description	N-Channel Power MOSFET
Buy	Stock & Price

DESCRIPTION

The Nell threshold voltage of 5 volts. DD G D S TO-3PB (75N10A) GDS TO-220AB (75N10B)

FEATURES

RDS(ON) = 0.025Ω @ VGS = 10V Ultra low gate charge(74nC typical) Low reverse transfer capacitance (CRSS = 275pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) typical 75 75 100 0.025 @ VGS = 10V 74

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VALUE VDSS VDGR VGS ID IDM IAR EAR EAS Drain to Source voltage Drain to Gate voltage Gate to Source voltage Continuous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy(Note 3) TJ=25°C to 150°C RGS=1MΩ TC=25°C TC=100°C lAS=50A, L=0.8mH 100 100 ±20 75 50 200 50 30 1000 dv/dt PD TJ TSTG TL Peak diode recovery dv/dt(Note 4) Total power...

75N10 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
75N10	Inchange Semiconductor