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8N60AF - N-Channel Power MOSFET

This page provides the datasheet information for the 8N60AF, a member of the 8N60 N-Channel Power MOSFET family.

Datasheet Summary

Description

The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max.

threshold voltage of 4 volts.

They are designed for use in applications.

Features

  • RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max. ) Low reverse transfer capacitance (CRSS = 12pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature.

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Datasheet preview – 8N60AF

Datasheet Details

Part number 8N60AF
Manufacturer nELL
File Size 620.12 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 8N60AF Datasheet
Additional preview pages of the 8N60AF datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . FEATURES RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(36nC max.
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