BD912
FEATURES
Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: f T = 3 MHz (Min.) @ l C = 0.5 Adc Excellent safe operating area
DESCRIPTION
The BD911 is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The plementary PNP type is BD912.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1) B
(3) E
BD911(NPN)
C (2)
(1) B
(3) E
BD912(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage (IC = 0)
IC Collector current
IB Base current
Total power dissipation PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature Tstg...
