Nell Power Semiconductor BU941
NPN Power Darlington
FEATURES
NPN Darlington Integrated antiparallel Collector-Emitter Diode Very rugged bipolar technology High operating junction temperatureAPPLICATIONS
High ruggedness electronic ignitions CC BCE TO-220AB (BU941A) B C E TO-3P(B) (BU941B) *Internal Schematic Diagram C(2) PRODUCT SUMMARY IC (A) VCEO (V) hFE 15 400 300 Min. B(1)ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VCES Collector to Emitter Voltage VBE=0 VCEO Collector to Emitter Voltage IB=0 VEBO IC ICM Emitter to Base Voltage Collector Current Collector Peak Current IC=0 IB Base Current IBM Base Peak Current PD Total power dissipation TO-220AB TC=25°C TO-3P(B) TJ TSTG Operation junction temperature Storage temperature E(3) VALUE 500 400 5 15 30 1.0 5.0 150 155 -65 to 175 -65 to 175 UNIT V A W °C Page