Nell Power Semiconductor FJA13009
Silicon NPN Transistor
FEATURES
High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw 4.0 max 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 CAPPLICATIONS
Switching regulator and general purpose Ultrasonic generators High frequency inverters 1 2 3 B E NPN All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(TC = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Maximum peak collector current (pulse) Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE 700 400 7 12 24 6 130 150 ºC -55 to 150 W A V UNIT THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) PARAMETER Thermal resistance, junction to case VALUE 1.55 UNIT ºC/W Page 1 of 4 SEMICONDUCTOR FJA13009 RoH...