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IRF830A - N-Channel Power MOSFET

Download the IRF830A datasheet PDF. This datasheet also covers the IRF830 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max. ) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF830A) D (Drain) G (Gate) S (Source).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF830-nELL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Nell Power Semiconductor

Part Number Description
IRF830 N-Channel Power MOSFET
IRF840 N-Channel Power MOSFET
IRF840A N-Channel Power MOSFET
IRF1010 N-Channel Power MOSFET
IRF13N50 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.