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MJE13005A Datasheet Switchmode Series NPN Silicon Power Transistors

Manufacturer: Nell Power Semiconductor

Overview: SEMICONDUCTOR MJE13005A(NPN) RoHS RoHS Nell High Power Products Switchmode Series NPN Silicon Power Transistors (4A / 400V /.

General Description

T hese devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220V SWITCHMODE applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.

INTERNAL SCHEMATIC DIAGRAM C (TAB) (1) B (2) E ( NPN) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VCEV V CEO V EBO IC I CM IB I BM PARAMETER Collector to base voltage (V BE = 0) Collector to emitter voltage (I B = 0) Emitter to base voltage C ollector current - continuous VALUE 700 400 9 4 UNIT V Peak collector current (Note 1) B ase current - continuous 8 2 A Peak base current (Note 1) 4 IE I EM PD Emitter current - continuous Peak emitter current (Note 1) 6 12 T C = 25 °C 75 0.6 150 ºC -65 to 150 26 5 Total power dissipation Derate above 25ºC Tj T stg TL W W/ºC Junction temperature Storage temperature Maximum lead temperature for soldering purposes: 1/16” from case for ≤ 10 seconds ºC Note: 1.

Key Features

  • VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max. ) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max. ) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A).

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