TIP36B Description
SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products plementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1.
TIP36B Key Features
- Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A
- Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.)
- TIP35,TIP36
- TIP35A,TIP36A = 80Vdc (Min.)
- TIP35B, TIP36B = 100Vdc (Min.)
- TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain
- Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.0A