Nell Power Semiconductor TTA1943
Silicon PNP Transistor
FEATURES
High-speed switching High collector-emitter voltage: VCEO = -230V(min) Complementary to TTC5200 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20 5.45 ± 0.05 1 2 3 C (2) 1. BASE 2. COLLECTOR (HEAT SINK)APPLICATIONS
Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage 3. EMITTER B (1) PNP E (3) All dimensions in millimetersABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current, tp ≤ 5ms Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE -230 -230 -5 -15 A -30 -1.5 150 150 ºC -55 to 150 W V UNIT Page 1 of 3 SEMICONDUCTOR TTA1943 RoHS RoHS Nell High Power ProductsELECTRICAL CHARACTERISTICS
(Ta = 25°C) SYMBOL ICBO I EBO V (BR)CEO V CBO V EBO h FE PARAMETER Collector cutoff curren...