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LN4703 - P-Channel Enhancement Mode Field Effect Transistor

General Description

The LN4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Key Features

  • s.
  • VDS(V) = -20V.
  • ID = -3.4A (VGS = -4.5V).
  • RDS(ON) < 90mΩ (VGS = -4.5V).
  • RDS(ON) < 120mΩ (VGS = -2.5V).
  • RDS(ON) < 160mΩ (VGS = -1.8V).
  • Schottky：VKA (V) = 20V, IF = 1A, VF.

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Datasheet Details

Part number LN4703
Manufacturer natlinear
File Size 363.87 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN4703 Datasheet

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LN4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky ■ General Description The LN4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product LN4703 is Pb-free (meets ROHS & Sony 259 specifications). LN4703 is a Green Product ordering option. ■ Features  VDS(V) = -20V  ID = -3.4A (VGS = -4.5V)  RDS(ON) < 90mΩ (VGS = -4.5V)  RDS(ON) < 120mΩ (VGS = -2.5V)  RDS(ON) < 160mΩ (VGS = -1.8V)  Schottky：VKA (V) = 20V, IF = 1A, VF<0.5V@0.