natlinear LN8212
Dual N-Channel Enhancement Mode MOSFET
FEATURES
● Surface-Mounted Package● Extremely low threshold voltage
● Advanced trench cell design
● ESD protected
● Package
● TSSOP-8
● Ordering Information Part Number LN8205CIU
● Pin Configuration
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APPLICATIONS
● Portable appliances● Battery management Storage Temperature -55°C to 150°C Package TSSOP8 D1 S1 2 S1 3 G1 4 TSSOP-8 (Top View) 8D 7 S2 6 S2 5 G2
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ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM Is Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Diode Conduction Ptot* Total Power Dissipation TSSOP8 TJ Junction Temperature RθJA Thermal Resistance-Junction to Ambient Conditions Min Max Unit TA=25℃ 20 V TA=25℃ ±12 V TA=25℃, VGS=4.5V 6.4 A TA=25℃, VGS=4.5V 20 A TA=25℃ 1 A TA=25℃ 1.25 W TA=100℃ 0.7 W -55 150 ℃ 150 ℃/W Rev.1.0 —Ju ly. 15, 2011 1●
ELECTRICAL CHARACTERISTICS
LN8212 (TA=25℃ unless otherwise noted) Parameter Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current Drain-source on...