natlinear NP12N04ER
The NP12N04ER uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.| Part No. | NP12N04ER |
|---|---|
| Datasheet | NP12N04ER Download |
| Manufacturer | natlinear |
| Description | 40V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. D GGENERAL FEATURES
S● VDS =40V, ID =12A RDS(ON)(Typ.)=12.7mΩ @ V GS =10V RDS(ON)(Typ.)=14.5mΩ @ V GS =4.5V
● Lead free product is acquired
● Surface mount package Marking and pin assignment ESOP-8 Application
● High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
● Networking DC-DC Power System
● Load switch Package
● ESOP-8 HF Pb XXXX—Wafer Lot No. YYYY—Quality Code Ordering Information Part Number NP12N04ER--G Storage Temperature -55°C to +150°C Package ESOP-8 Devices Per Reel 4000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Avalanche energy( L=0.1mH) Maximum power dissipation TC=25°C Power Dissipation – Derate above 25℃ TC=25°C Operating junction Temperature range symbol V DS V GS ID I DP EAS PD Tj limit unit 40 V ±20 V 12 A 8 60 A 14 mJ 2.5 W 2 -55—150 ℃ Rev.1.1 —Oct.
