natlinear NP2012
The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.| Part No. | NP2012 |
|---|---|
| Datasheet | NP2012 Download |
| Manufacturer | natlinear |
| Description | 20V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment DFN2*2-6L-B （Thickness 0.55mm） Application
● PWM applications
● Load switch Package
● DFN2*2-6L-B NP----Natlinear Power 2012----NP2012 Ordering Information Part Number NP2012DR-G Storage Temperature -55°C to +150°C Package DFN2*2-6L-B Devices Per Reel 4000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Drain-source Diode forward current Maximum power dissipation Operating junction Temperature range symbol limit unit VDS 20 V VGS ±12 V ID 12 A IDM 48 A Is 12 A PD 18 W Tj -55—150 ℃ Rev.1.0 —Jan.8.2018 1 NP2012ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min OFF Characteristics Drain-source breakdo...
