NP2012
Description
Schematic diagram
The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Marking and pin assignment
DFN2- 2-6L-B （Thickness 0.55mm）
Application
- PWM applications
- Load switch
Package
- DFN2- 2-6L-B
NP----Natlinear Power 2012----NP2012
Ordering Information
Part Number NP2012DR-G
Storage Temperature -55°C to +150°C
Package DFN2- 2-6L-B
Devices Per Reel 4000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃
-pulse db Drain-source Diode forward current
Maximum power dissipation Operating junction Temperature range symbol limit...
