NP2012 Datasheet PDF (20V N-Channel Enhancement Mode MOSFET)

NP2012 - 20V N-Channel Enhancement Mode MOSFET

Description

The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS =20V，ID =12A RDS(ON)(Typ. )=15mΩ @VGS=2.5V RDS(ON)(Typ. )=12mΩ @VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment DFN2.
2-6L-B （Thickness 0.55mm）.

Datasheet Details

Part number	NP2012
Manufacturer	natLinear
File Size	1.51 MB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	NP2012 Datasheet
Additional preview pages of the NP2012 datasheet.

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Full PDF Text Transcription

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20V N-Channel Enhancement Mode MOSFET NP2012 Description Schematic diagram The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment DFN2*2-6L-B （Thickness 0.

Published: Jul 23, 2024 |