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NP2N11MR - 100V N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number NP2N11MR
Manufacturer natlinear
File Size 0.97 MB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP2N11MR Datasheet

General Description

The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.

This device is suitable for use as a load switch or in PWM applications.

Overview

NP2N11MR 100V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS =110V，ID =2A RDS(ON)(Typ. )=220mΩ @VGS=10V RDS(ON)(Typ. )=240mΩ @VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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