NP2N11MR Description
Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
NP2N11MR Key Features
- VDS =110V，ID =2A
- High power and current handing capability
- Lead free product is acquired
- Surface mount package