NP2N11MR
Description
Schematic diagram
The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS =110V，ID =2A
RDS(ON)(Typ.)=220mΩ @VGS=10V
RDS(ON)(Typ.)=240mΩ
@VGS=4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- PWM applications
- Load switch
Marking and pin assignment
SOT-23-3L (TOP VIEW)
NP2N11
Package
- SOT-23-3L
Ordering Information
Part Number NP2N11MR-G
Storage Temperature -55°C to +150°C
Package SOT-23-3L
Devices Per Reel 3000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain current-continuous@Tj=125℃
-pulse d C Drain-source Diode forward current
Avalanche Current Single Pulse Avalanche Energy
Maximum power dissipation B...
