NP3007DR - 30V P-Channel Enhancement Mode MOSFET

General Description

The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

D.
VDS =-30V，ID =-7A RDS(ON)(Typ. )=28mΩ @VGS=-10V RDS(ON)(Typ. )=36mΩ @VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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NP3007DR 30v p-channel enhancement mode mosfet by natlinear - Datasheet Preview

Datasheet Details

Part number	NP3007DR
Manufacturer	natlinear
File Size	283.67 KB
Description	30V P-Channel Enhancement Mode MOSFET
Datasheet	NP3007DR Datasheet

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NP3007DR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  VDS =-30V，ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application Marking and pin assignment DFN2*2-6L-B （Thickness 0.