Datasheet4U Logo Datasheet4U.com

NP3065D6 - 30V N-Channel Enhancement Mode MOSFET

General Description

The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • Marking and pin assignment.
  • VDS =30V，ID =65A RDS(ON)(Typ. )=6.3mΩ @VGS=10V RDS(ON)(Typ. )=9mΩ @VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • 100% UIS tested.

📥 Download Datasheet

Datasheet Details

Part number NP3065D6
Manufacturer natlinear
File Size 678.09 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3065D6 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP30N04QUK Dual N-channel Power MOSFET Renesas
NP30N06QDK Dual N-channel Power MOSFET Renesas
NP32N055HDE N-Channel Power MOSFET NEC
NP32N055HHE N-Channel MOSFET Renesas
NP32N055HLE N-Channel Power MOSFET NEC

Other Datasheets by natlinear

Part Number Description
NP3007DR 30V P-Channel Enhancement Mode MOSFET
NP3095G 30V N-Channel Enhancement Mode MOSFET
NP3400MR-S N-Channel Enhancement Mode MOSFET
NP3401MR-M 30V P-Channel Enhancement Mode MOSFET
NP3401VR 30V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NP3065D6 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features Marking and pin assignment  VDS =30V，ID =65A RDS(ON)(Typ.)=6.3mΩ @VGS=10V RDS(ON)(Typ.)=9mΩ @VGS=4.