natlinear NP3065D6
The NP3065D6 uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.| Part No. | NP3065D6 |
|---|---|
| Datasheet | NP3065D6 Download |
| Manufacturer | natlinear |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
Marking and pin assignment● VDS =30V，ID =65A RDS(ON)(Typ.)=6.3mΩ @VGS=10V RDS(ON)(Typ.)=9mΩ @VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● 100% UIS tested Application
● Synchronus Rectification in DC/DC and AC/DC Converters
● Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP3065D6-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-A Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current Avalanche energy(Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω) Power Dissipation TC=25°C TC=70°C Operating junction Temperature range Rev.1.1 —Jan. 20. 2019 1 symbol VDS VGS ID IDP EAS PD Tj limit unit 30 V ±20 V 65 A 50 200 A 150 mJ 65 W 40 -55—150 ℃ NP3065D6 Electrical Characteris...
