Datasheet4U Logo Datasheet4U.com

NP3095G - 30V N-Channel Enhancement Mode MOSFET

General Description

The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V，ID =95A RDS(ON)(Typ. )=4.3mΩ @VGS=10V RDS(ON)(Typ. )=6.9mΩ @VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number NP3095G
Manufacturer natlinear
File Size 632.80 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3095G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP30N04QUK Dual N-channel Power MOSFET Renesas
NP30N06QDK Dual N-channel Power MOSFET Renesas
NP32N055HDE N-Channel Power MOSFET NEC
NP32N055HHE N-Channel MOSFET Renesas
NP32N055HLE N-Channel Power MOSFET NEC

Other Datasheets by natlinear

Part Number Description
NP3007DR 30V P-Channel Enhancement Mode MOSFET
NP3065D6 30V N-Channel Enhancement Mode MOSFET
NP3400MR-S N-Channel Enhancement Mode MOSFET
NP3401MR-M 30V P-Channel Enhancement Mode MOSFET
NP3401VR 30V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
30V N-Channel Enhancement Mode MOSFET NP3095G Description Schematic diagram The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features  VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.