natlinear NP3095G
The NP3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NP3095G |
|---|---|
| Datasheet | NP3095G Download |
| Manufacturer | natlinear |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =30V，ID =95A RDS(ON)(Typ.)=4.3mΩ @VGS=10V RDS(ON)(Typ.)=6.9mΩ @VGS=4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● Load switch Package
● TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP3095G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V TC=25°C Continuous Drain Current ID TC=70°C 95 A 66 Pulsed Drain Current IDP 380 A Avalanche energy( L=0.5mH) EAS 231 mJ TC=25°C Maximum power disspation PD TC=70°C 20 W 9 Operating junction Temperature range Tj -55—150 ℃ Rev.1.1 —Jan.23. 2024 1 NP3095GELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ...
