natlinear NP3416BEMR
The NP3416BEMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | NP3416BEMR |
|---|---|
| Datasheet | NP3416BEMR Download |
| Manufacturer | natlinear |
| Description | 20V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD Rating: 2500V HBM Marking and pin assignment Application
● PWM applications
● Load switch Package
● SOT-23-3L Ordering Information Part Number NP3416BEMR-G Storage Temperature -55°C to +150°C Package SOT-23-3L
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Current C Maximum power dissipation B Operating junction Temperature range TA=25℃ TA=70℃ TA=25℃ TA=70℃ symbol VDS VGS ID IDM PD Tj Devices Per Reel 3000 limit unit 20 V ±8 V 4 A 3 20 A 1.4 0.9 W -55—150 ℃ Rev.1.1 —Oct. 26. 2017 1 NP3416BEMRELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 20 Zer...
