NP35S03QR
Description
Schematic diagram
The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
- VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
Marking and pin assignment
PDFN3×3-8L
（Top View）
S1 S2 S3 G4
NP35S03 XXXX YYYY
8D 7D 6D 5D
Package
- PDFN3X3-8L
HF Pb
XXXX- Wafer Information YYYY- Quality Code
Ordering Information
Part Number NP35S03QR-G
Storage Temperature -55°C to +150°C
Package PDFN3X3-8L
Devices Per...
