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NP45S06D6-Sn - 60V N-Channel Enhancement Mode MOSFET

General Description

The NP45S06D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =60V ID =45A RDS(ON)(Typ. )=7.7 mΩ @VGS=10V RDS(ON)(Typ. )=11.7mΩ @VGS=4.5V.
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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Datasheet Details

Part number NP45S06D6-Sn
Manufacturer natlinear
File Size 649.03 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP45S06D6-Sn Datasheet

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Full PDF Text Transcription (Reference)

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NP45S06D6-Sn 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP45S06D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features  VDS =60V ID =45A RDS(ON)(Typ.)=7.7 mΩ @VGS=10V RDS(ON)(Typ.)=11.7mΩ @VGS=4.