natlinear NP45S06D6-Sn
The NP45S06D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.| Part No. | NP45S06D6-Sn |
|---|---|
| Datasheet | NP45S06D6-Sn Download |
| Manufacturer | natlinear |
| Description | 60V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =60V ID =45A RDS(ON)(Typ.)=7.7 mΩ @VGS=10V RDS(ON)(Typ.)=11.7mΩ @VGS=4.5V● Very low on-resistance RDS(on)
● 150 °C operating temperature
● 100% UIS tested Marking and pin assignment Application
● Synchronus Rectification in DC/DC Converters
● Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP45S06D6-Sn-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-A
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Avalanche energy(Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω) Power Dissipation TC=25°C TC=100°C Operating junction Temperature range symbol VDS VGS ID EAS PD Tj Devices Per Reel 5000 limit unit 60 V ±20 V 45 A 40 79 mJ 48 W 19 -55—150 ℃ Rev.1.1 —Oct. 10. 2022 1 NP45S06D6-SnELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Static Characteristics Drain...
