Datasheet4U Logo Datasheet4U.com

NP4606G - 30V N And P-Channel Enhancement Mode MOSFET

General Description

The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

📥 Download Datasheet

Datasheet Details

Part number NP4606G
Manufacturer natlinear
File Size 450.07 KB
Description 30V N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4606G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP40N055CLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055DLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055ELE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055KLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055MLE MOS FIELD EFFECT TRANSISTOR Renesas

Other Datasheets by natlinear

Part Number Description
NP4614QR N And P-Channel Enhancement Mode MOSFET
NP4008SR 40V N-Channel Enhancement Mode MOSFET
NP4406SR 30V N-Channel Enhancement Mode MOSFET
NP4406SR-J 30V N-Channel Enhancement Mode MOSFET
NP44N03 30V N-Channel MOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NP4606G 30V N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. D1/D2 General Features  N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.