natlinear NP4606G
The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP4606G |
|---|---|
| Datasheet | NP4606G Download |
| Manufacturer | natlinear |
| Description | 30V N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram D1/D2GENERAL FEATURES
● N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Application N-CH P-CH Marking and pin assignment D1/D2 NP4606 XXXX YYYY S1 G1 S2 G2
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4606G-G Storage Temperature -55°C to +150°C Package TO252-4L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Limit Symbol Unit N P Drain-source voltage VDS 30 -30 V Gate-source voltage VGS ±20 ±20 V Operating junction Temperature range Tj -55—150 -55—150 ℃ Drain Current-Continuous TA=25°C ID 12 -12 A Rev.1.1 —Jun.13.
