NP4606G
Description
Schematic diagram
The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
D1/D2
General Features
- N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(ON)=36mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(ON) product(FOM)
- Very low on-resistance RDS(ON)
- 150 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
N-CH
P-CH
Marking and pin assignment
D1/D2
NP4606 XXXX YYYY
S1 G1 S2 G2
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
XXXX- Wafer Information YYYY- Quality Code
Ordering Information
Part Number NP4606G-G
Storage Temperature -55°C to +150°C
Package TO252-4L
Devices Per Reel 2500
Absolute Maximum Ratings (TA=25℃ unless...
