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NP4614QR - N And P-Channel Enhancement Mode MOSFET

General Description

The NP4614QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-channel： VDS =40V，ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-40V，ID =-10A RDS(ON)=29mΩ (typical) @ VGS=-10V RDS(ON)=40mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating N-CH P-CH Marking and pin assignment PDFN3×3-8L （Top View） S1 1 G1 2 S2 3 G2 4 4614 XXXX 8 D1 7 D1 6 D2 5 D2.

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Datasheet Details

Part number NP4614QR
Manufacturer natlinear
File Size 562.23 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4614QR Datasheet

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NP4614QR N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4614QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =40V，ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-40V，ID =-10A RDS(ON)=29mΩ (typical) @ VGS=-10V RDS(ON)=40mΩ (typical) @ VGS=-4.