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NP4803SR - 30V Dual P-Channel Enhancement Mode MOSFET

General Description

The NP4803SR uses advanced trench technology to provide excellent RDS(ON) ，low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =-30V，ID =-5A RDS(ON)(Typ. )=38mΩ @VGS=-10V RDS(ON)(Typ. )=51mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet Details

Part number NP4803SR
Manufacturer natlinear
File Size 747.39 KB
Description 30V Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4803SR Datasheet

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NP4803SR 30V Dual P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4803SR uses advanced trench technology to provide excellent RDS(ON) ，low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-5A RDS(ON)(Typ.)=38mΩ @VGS=-10V RDS(ON)(Typ.)=51mΩ @VGS=-4.