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NP4822SR - 60V Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP4822SR uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Features

  • VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating S1 S2 Marking and pin assignment.

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Datasheet preview – NP4822SR

Datasheet Details

Part number NP4822SR
Manufacturer natLinear
File Size 1.26 MB
Description 60V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4822SR Datasheet
Additional preview pages of the NP4822SR datasheet.

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NP4822SR 60V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4822SR uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features  VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.
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