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NP4822SR - 60V Dual N-Channel Enhancement Mode MOSFET

General Description

The NP4822SR uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Key Features

  • VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating S1 S2 Marking and pin assignment.

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Datasheet Details

Part number NP4822SR
Manufacturer natlinear
File Size 1.26 MB
Description 60V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4822SR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP4822SR 60V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4822SR uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features  VDS =60V,ID =9A RDS(ON)=11.5mΩ (typical) @ VGS=10V RDS(ON)=15mΩ (typical) @ VGS=4.