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NP4886SR - 40V Dual N-Channel Enhancement Mode MOSFET

General Description

The NP4886 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Key Features

  • VDS =40V,ID =8A RDS(ON)=14.6mΩ (typical) @ VGS=10V RDS(ON)=17.5mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested S1 S2 Marking and pin assignment.

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Datasheet Details

Part number NP4886SR
Manufacturer natlinear
File Size 448.19 KB
Description 40V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4886SR Datasheet

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NP4886SR 40V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4886 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. D1 G1 D2 G2 General Features  VDS =40V,ID =8A RDS(ON)=14.6mΩ (typical) @ VGS=10V RDS(ON)=17.5mΩ (typical) @ VGS=4.