NP4N65G Datasheet | natlinear

650V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features - VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V - High power and current handing capability - Lead free product is acquired - Surface mount package - 150 °C operating temperature - 100% UIS tested Marking and pin assignment Application - PWM applications - Load switch - Uninterruptible power supply Package - TO-252-2L XXXXX- Wafer Information YYYYY- Quality Code Ordering Information Part Number NP4N65G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel...