natlinear NP4N65G
The NP4N65G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. The value in any given application depends on the user's specific board design.| Part No. | NP4N65G |
|---|---|
| Datasheet | NP4N65G Download |
| Manufacturer | natlinear |
| Description | 650V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =650V，ID =4A RDS(ON)(Typ.)= 2.49Ω @VGS=10V● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● 150 °C operating temperature
● 100% UIS tested Marking and pin assignment Application
● PWM applications
● Load switch
● Uninterruptible power supply Package
● TO-252-2L XXXXX—Wafer Information YYYYY—Quality Code Ordering Information Part Number NP4N65G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=70°C Pulsed Drain Current Avalanche energy(Tj=25℃ ,VDD=100V,VG=10V,L=0.5mH,Rg=50Ω) Power Dissipation TC=25°C Operating junction Temperature range symbol limit unit VDS 650 V VGS ±30 V 4 ID A 3 IDP 16 A EAS 40 mJ PD 41 W Tj -55—150 ℃ Rev.1.1 —May.4. 2023 1 NP4N65GELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Par...
