natlinear NP4P06MR-M
The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.| Part No. | NP4P06MR-M |
|---|---|
| Datasheet | NP4P06MR-M Download |
| Manufacturer | natlinear |
| Description | 60V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● Battery protection
● Load switch Package
● SOT-23-3L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4P06MR-M-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Current C Maximum power dissipation B Operating junction Temperature range TA=25℃ TA=70℃ TA=25℃ TA=70℃ symbol limit unit VDS -60 V VGS ±20 V -4 A ID -3 A IDM -16 A 1.4 PD W 0.9 Tj -55—150 ℃ Rev.1.1 —Sep.29.2022 1 NP4P06MR-MELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Symbol Condition Min OFF Characteristics Drain-source breakdown voltage BVDSS...
