NP4P06MR-M Datasheet | natlinear

60V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4P06MR-M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features - VDS =-60V，ID =-4A RDS(ON)(Typ.)=91mΩ @VGS=-10V RDS(ON)(Typ.)=101mΩ @VGS=-4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package Marking and pin assignment Application - Battery protection - Load switch Package - SOT-23-3L XXXX- Wafer Information YYYY- Quality Code Ordering Information Part Number NP4P06MR-M-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel...