natlinear NP60S10D6
The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.| Part No. | NP60S10D6 |
|---|---|
| Datasheet | NP60S10D6 Download |
| Manufacturer | natlinear |
| Description | 100V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● 100% UIS tested Marking and pin assignment Application
● Synchronus Rectification in DC/DC and AC/DC Converters
● Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP60S10D6-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-A
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Operating junction Temperature range TC=25°C TC=70°C TC=25°C TC=70°C symbol VDS VGS ID IDP PD Tj Devices Per Reel 5000 limit unit 100 V ±20 V 60 A 42 240 A 160 W 85 -55—150 ℃ Rev.1.1 —Jan. 20. 2019 1 NP60S10D6ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Static Charac...
