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NP60S10D6 - 100V N-Channel Enhancement Mode MOSFET

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Datasheet Details

Part number NP60S10D6
Manufacturer natlinear
File Size 656.52 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP60S10D6 Datasheet

General Description

The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Overview

NP60S10D6 100V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS =100V，ID =60A RDS(ON)(Typ. )=4.6mΩ @VGS=10V RDS(ON)(Typ. )=6.5mΩ @VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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