natlinear NP6666D6
The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | NP6666D6 |
|---|---|
| Datasheet | NP6666D6 Download |
| Manufacturer | natlinear |
| Description | N And P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.5V● Excellent gate charge x RDS(ON) product(FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6666 XXXXX YYYYY S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom View Application
● Pch+Nch Complementary MOSFET for DC-FAN
● H-Bridge application XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6666D6-G Storage Temperature -55°C to +150°C Package PDFN5*6-8L-B Devices Per Reel 5000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Limit Symbol Unit N P Drain-source voltage V DS 30 -30 V Gate-source voltage V GS ±20 ±20 V Operating junction Temperature range Tj -55—150 -55—150 ℃ Drain Current-Continuous TA=25°C (Silicon Limited) TA=75°C ID 30 22 -30 -22 A Rev.1.1 —Nov.
