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NP6666D6 - N And P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.5V.
  • Excellent gate charge x RDS(ON) product(FOM).
  • Very low on-resistance RDS(ON).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Marking and pin assignment PDFN5×6-8L-B D1 D1 D2 D2 D2 D2 D1 D1 NP6666 XXXXX YYYYY S1 G1 S2 G2 Top View G2 S2 G1 S1 Bottom.

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Datasheet Details

Part number NP6666D6
Manufacturer natLinear
File Size 829.37 KB
Description N And P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP6666D6 Datasheet
Additional preview pages of the NP6666D6 datasheet.

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Full PDF Text Transcription

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NP6666D6 N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON)=19mΩ (typical) @ VGS=-4.
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