natlinear NP7N65G
The NP7N65G uses advanced high-voltage plane technology to provide excellent RDS(ON) and low gate charge. This power MOSFET is typically used for backup power supplies, LED lighting, and chargers.| Part No. | NP7N65G |
|---|---|
| Datasheet | NP7N65G Download |
| Manufacturer | natlinear |
| Description | 650V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =650V，ID =7A RDS(ON)(Typ.)=1.15Ω @VGS=10V● Fast switching tim
● Low gate charge
● Low on-state resistance and have a high rugged avalanche characteristics
● Excellent package for good heat dissipation Marking and pin assignment TO-252-2L （Top View） Application
● Hard switched and high frequency circuits
● Uninterruptible power supply Package
● TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP7N65G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Avalanche energy( L=0.5mH) Maximum power dissipation TC=25°C Operating junction Temperature range symbol limit unit VDS 650 V VGS ±30 V 7 ID A 5 IDM 28 A EAS 120 mJ PD 60 W Tj -55—150 ℃ Rev.1.1 —May. 4. 2023 1 NP7N65GELECTRICAL CHARACTERISTICS
(TA=25℃ unless...
