Datasheet4U Logo Datasheet4U.com

NP9435ASR-S - 30V P-Channel Enhancement Mode MOSFET

General Description

The NP9435ASR-S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in load switch and battery protection applications.

Key Features

  • VDS =-30V，ID =-6A RDS(ON)(Typ. )=66mΩ @VGS=-10V RDS(ON)(Typ. )=96mΩ @VGS=-4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment SOP-8.

📥 Download Datasheet

Datasheet Details

Part number NP9435ASR-S
Manufacturer natlinear
File Size 0.98 MB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP9435ASR-S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP90N03VHG MOS FIELD EFFECT TRANSISTOR Renesas
NP90N03VLG MOS FIELD EFFECT TRANSISTOR Renesas
NP90N04MUG N-CHANNEL POWER MOS FET Renesas
NP90N04MUK MOS FIELD EFFECT TRANSISTOR Renesas
NP90N04NUK MOS FIELD EFFECT TRANSISTOR Renesas

Other Datasheets by natlinear

Part Number Description
NP90N03G 30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NP9435ASR-S 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP9435ASR-S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features  VDS =-30V，ID =-6A RDS(ON)(Typ.)=66mΩ @VGS=-10V RDS(ON)(Typ.)=96mΩ @VGS=-4.