Datasheet4U Logo Datasheet4U.com

74AHCT2G08DC - Dual 2-input AND gate

Download the 74AHCT2G08DC datasheet PDF. This datasheet also covers the 74AHC2G08 variant, as both devices belong to the same dual 2-input and gate family and are provided as variant models within a single manufacturer datasheet.

General Description

The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device.

The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates.

Key Features

  • Symmetrical output impedance.
  • High noise immunity.
  • ESD protection:.
  • HBM JESD22-A114E exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101C exceeds 1000 V.
  • Low power dissipation.
  • Balanced propagation delays.
  • Multiple package options.
  • Specified from -40 °C to +80 °C and from -40 °C to +125 °C 3 Ordering information Table 1. Ordering information Type number Package Temperature range.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (74AHC2G08-nexperia.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
74AHCT2G08 Dual 2-input AND gate NXP Semiconductors
74AHCT2G00 high-speed Si-gate CMOS device NXP Semiconductors
74AHCT2G00-Q100 Dual 2-input NAND gate NXP
74AHCT2G126 Dual buffer/line driver NXP Semiconductors
74AHCT2G126-Q100 Dual buffer/line driver NXP

Other Datasheets by Nexperia

Part Number Description
74AHCT2G08DP Dual 2-input AND gate
74AHCT2G08 Dual 2-input AND gate
74AHCT2G08-Q100 Dual 2-input AND gate
74AHCT2G00 Dual 2-input NAND gate
74AHCT2G00-Q100 Dual 2-input NAND gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
74AHC2G08; 74AHCT2G08 Dual 2-input AND gate Rev. 6 — 21 March 2018 Product data sheet 1 General description The 74AHC2G08; 74AHCT2G08 is a high-speed Si-gate CMOS device. The 74AHC2G08; 74AHCT2G08 provides two 2-input AND gates. 2 Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • – HBM JESD22-A114E exceeds 2000 V – MM JESD22-A115-A exceeds 200 V – CDM JESD22-C101C exceeds 1000 V • Low power dissipation • Balanced propagation delays • Multiple package options • Specified from -40 °C to +80 °C and from -40 °C to +125 °C 3 Ordering information Table 1.