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74AUP2G00-Q100 - Low-power dual 2-input NAND gate

General Description

The 74AUP2G00-Q100 provides dual 2-input NAND function.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

Key Features

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1).
  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C.
  • Wide supply voltage range from 0.8 V to 3.6 V.
  • High noise immunity.
  • Complies with JEDEC standards:.
  • JESD8-12 (0.8 V to 1.3 V).
  • JESD8-11 (0.9 V to 1.65 V).
  • JESD8-7 (1.2 V to 1.95 V).
  • JESD8-5 (1.8 V to 2.7 V).
  • JESD8-B (2.7 V to 3.6 V).
  • ESD protection:.
  • HBM JESD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74AUP2G00-Q100 Low-power dual 2-input NAND gate Rev. 2 — 9 June 2022 Product data sheet 1. General description The 74AUP2G00-Q100 provides dual 2-input NAND function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2.