Nexperia BAS116
Low-leakage diode
| Part No. | BAS116 |
|---|---|
| Datasheet | BAS116 Download |
| Manufacturer |  Nexperia |
| Description | Low-leakage diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Plastic SMD package● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 us
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA.
● AEC-Q101 qualified 3.
APPLICATIONS
● Low leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF VRRM forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C repetitive peak reverse Tj = 25 °C voltage VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IR reverse current VR = 75 V; pulsed; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 215 mA - - 85 V - - 1.1 V - 0.003 5 nA - 0.8 3 µs 5. Pinning information Table 2. Pinning information Pin SymbolDESCRIPTION
1 A anode 2 n.c. not connected 3 K cathode Simplified outline 3 1 2 SOT23 Graphic symbol K A n.c. 006aaa764 Nexperia BAS116 Low-leakage diode 6.
