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BAS116 - Low-leakage diode

General Description

Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.

2.

Key Features

  • Plastic SMD package.
  • Low leakage current: typ. 3 pA.
  • Switching time: typ. 0.8 us.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 85 V.
  • Repetitive peak forward current: max. 500 mA.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number BAS116
Manufacturer Nexperia
File Size 200.28 KB
Description Low-leakage diode
Datasheet download datasheet BAS116 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS116 Low-leakage diode 5 August 2020 Product data sheet 1. General description Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. • AEC-Q101 qualified 3. Applications • Low leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF VRRM forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C repetitive peak reverse Tj = 25 °C voltage VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.