Nexperia BAS116L
Low-leakage diode
| Part No. | BAS116L |
|---|---|
| Datasheet | BAS116L Download |
| Manufacturer |  Nexperia |
| Description | Low-leakage diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Switching time typical: trr = 0.8 µs● Low leakage current typical: IR = 3 pA
● Repetitive peak reverse voltage: VRRM ≤ 85 V
● Low capacitance typical: Cd = 2 pF
● Leadless ultra small SMD plastic package
● Low package height of 0.48 mm
● AEC-Q101 qualified 3.
APPLICATIONS
● Low-leakage current applications● General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage IF forward current Tamb = 25 °C [1] VR reverse voltage Tj = 25 °C VF forward voltage IF = 150 mA; Tj = 25 °C IR reverse current VR = 75 V; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω
