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BAS21-Q - High-voltage switching diode

General Description

High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High switching speed: trr ≤ 50 ns.
  • Low leakage current.
  • Reverse voltage VR ≤ 200 V.
  • Low capacitance: Cd ≤ 5 pF.
  • Small SMD plastic package.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number BAS21-Q
Manufacturer Nexperia
File Size 198.82 KB
Description High-voltage switching diode
Datasheet download datasheet BAS21-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS21-Q High-voltage switching diode 2 June 2021 Product data sheet 1. General description High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 5 pF • Small SMD plastic package • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • High-speed switching at high voltage • High-voltage general-purpose switching • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1.