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BAS21LL - High-voltage switching diode

General Description

High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High switching speed: trr ≤ 50 ns.
  • Low leakage current: IR ≤ 100 nA.
  • High reverse voltage VR ≤ 200 V.
  • Low capacitance: Cd ≤ 2 pF.
  • Ultra small SMD plastic package.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number BAS21LL
Manufacturer Nexperia
File Size 197.71 KB
Description High-voltage switching diode
Datasheet download datasheet BAS21LL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS21LL High-voltage switching diode 27 February 2018 Product data sheet 1. General description High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Ultra small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF VR VRRM forward current reverse voltage Tj = 25 °C repetitive peak reverse voltage VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.