Nexperia BAS21TH
High-voltage switching diode
FEATURES AND BENEFITS
● Switching speed max. 50 ns● Reverse voltage VR ≤ 200 V
● Repetitive peak reverse voltage VRRM ≤ 250 V
● Small SMD plastic package
● High-temperature applications up to 175 °C 3.
APPLICATIONS
● High-speed switching● General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ VRRM repetitive peak reverse voltage - - IF forward current [1] - - VR reverse voltage - - VF forward voltage IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; - - pulsed IR reverse current VR = 200 V - - trr reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω; - - IR(meas) = 3 mA [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-side copper, tin-plated and standard footprint. Max 250 200 200 1.25 100 50 Unit V mA V V nA ns Nexperia BAS21TH High-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 A anode 2 n.c. not connected 3 K cathode Simplified outline 3 1 2 SOT23 Graphic symbol K A n.c.