Nexperia BAS416-Q
Low-leakage switching diode
| Part No. | BAS416-Q |
|---|---|
| Datasheet | BAS416-Q Download |
| Manufacturer |  Nexperia |
| Description | Low-leakage switching diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Plastic SMD package● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 us
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA
● Qualified according to AEC-Q101 and recommended for use in automotive applications 3.
APPLICATIONS
● Low-leakage current applications in surface mounted circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF VRRM forward current Tj = 25 °C repetitive peak reverse voltage VF forward voltage IF = 50 mA; Tj = 25 °C IR reverse current VR = 75 V; pulsed; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 200 mA - - 85 V - - 1.1 V - 0.003 5 nA - 0.8 3 µs 5. Pinning information Table 2. Pinning information Pin SymbolDESCRIPTION
1 K cathode 2 A anode Simplified outline 1 2 SOD323 Graphic symbol K A aaa-032142 Nexperia BAS416-Q Low-leakage switching diode 6.
