BAV199 - Low-leakage double diode

Nexperia

General Description

Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package.

The diodes are connected in series.

Key Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 us.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA. 3.

📥 Download Datasheet

BAV199 low-leakage double diode by Nexperia - Datasheet Preview

Datasheet Details

Part number	BAV199
Manufacturer	Nexperia
File Size	653.43 KB
Description	Low-leakage double diode
Datasheet	BAV199 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BAV199	Low-leakage double diode	NXP
BAV199	Silicon Low Leakage Diode	Infineon Technologies AG
BAV199	SURFACE MOUNT SWITCHING DIODES	DC COMPONENTS
BAV199	Surface Mount Switching Diode	WEITRON
BAV199	LOW LEAKAGE DOUBLE DIODE	SEMTECH

Other Datasheets by Nexperia

Part Number	Description
BAV102	Single general-purpose switching diodes
BAV103	Single general-purpose switching diodes
BAV170	Low-leakage double diode
BAV170-Q	Low-leakage double diode
BAV170M	Dual common cathode low-leakage diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BAV199 Low-leakage double diode 1 April 2023 Product data sheet 1. General description Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. The diodes are connected in series. 2. Features and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. 3. Applications • Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current Conditions VR = 75 V; Tj = 150 °C Min Typ Max Unit - - 75 V - 3 80 nA 5.